Title :
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3(Gd2O3) dielectric
Author :
Chen, Chih-Ping ; Lin, Tsung-Da ; Chang, Yao-Chung ; Hong, Mingwhei ; Kwo, J. Raynien
Author_Institution :
Nat. TsingHua Univ., Hsinchu
Abstract :
In this work, we have developed a self-aligned gate process for fabricating inversion n-channel MOSFET´s of strained InGaAs on GaAs using TiN as the gate metal and GGO as the gate dielectric. Excellent performances of MOS diodes and MOSFET device have been demonstrated in this work, and are much better than other results of inversion-channel III-V MOSFET´s published earlier.
Keywords :
III-V semiconductors; MOSFET; gadolinium compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor diodes; semiconductor technology; titanium compounds; Ga2O3(Gd2O3); InGaAs-GaAs; MOS diodes; TiN; gate dielectric; gate metal; self-aligned inversion n-channel MOSFET; Dielectric materials; Diodes; Educational institutions; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Leakage current; MOSFET circuits; Thermodynamics; Tin;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422234
