• DocumentCode
    2656290
  • Title

    Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3(Gd2O3) dielectric

  • Author

    Chen, Chih-Ping ; Lin, Tsung-Da ; Chang, Yao-Chung ; Hong, Mingwhei ; Kwo, J. Raynien

  • Author_Institution
    Nat. TsingHua Univ., Hsinchu
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we have developed a self-aligned gate process for fabricating inversion n-channel MOSFET´s of strained InGaAs on GaAs using TiN as the gate metal and GGO as the gate dielectric. Excellent performances of MOS diodes and MOSFET device have been demonstrated in this work, and are much better than other results of inversion-channel III-V MOSFET´s published earlier.
  • Keywords
    III-V semiconductors; MOSFET; gadolinium compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor diodes; semiconductor technology; titanium compounds; Ga2O3(Gd2O3); InGaAs-GaAs; MOS diodes; TiN; gate dielectric; gate metal; self-aligned inversion n-channel MOSFET; Dielectric materials; Diodes; Educational institutions; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Leakage current; MOSFET circuits; Thermodynamics; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422234
  • Filename
    4422234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656290