Title :
Using SiGe technology in extreme environments
Author :
Cressler, John D.
Author_Institution :
Georgia Inst. of Technol., Atlanta
Abstract :
SiGe BiCMOS technology is presently being used as an IC design platform to support the development of electronic components designed to operate under the harsh lunar ambient conditions. The opportunities and challenges associated with utilizing SiGe technology in the general context of extreme environment electronics applications are addressed in this paper.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; BiCMOS technology; IC design platform; SiGe technology; electronics applications; extreme environments; Application specific integrated circuits; BiCMOS integrated circuits; Consumer electronics; Cryogenics; Electronic components; Germanium silicon alloys; Military computing; Moon; Silicon germanium; Temperature distribution;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422235
