DocumentCode
2656298
Title
Using SiGe technology in extreme environments
Author
Cressler, John D.
Author_Institution
Georgia Inst. of Technol., Atlanta
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
1
Abstract
SiGe BiCMOS technology is presently being used as an IC design platform to support the development of electronic components designed to operate under the harsh lunar ambient conditions. The opportunities and challenges associated with utilizing SiGe technology in the general context of extreme environment electronics applications are addressed in this paper.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; BiCMOS technology; IC design platform; SiGe technology; electronics applications; extreme environments; Application specific integrated circuits; BiCMOS integrated circuits; Consumer electronics; Cryogenics; Electronic components; Germanium silicon alloys; Military computing; Moon; Silicon germanium; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422235
Filename
4422235
Link To Document