DocumentCode :
2656305
Title :
The Formation Of Strain-induced Quantum Well Wires By Low Damage Chemical Dry Etching
Author :
Tan, I.-H. ; Yasuda, T. ; Mirin, R. ; Lishan, D. ; Jayaraman, V. ; Prater, C. ; Hu, E.L. ; Bowers, J. ; Merz, J.
Author_Institution :
University of California, Santa Barbara, CA
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
82
Lastpage :
82
Keywords :
Chemicals; Dry etching; Gallium arsenide; Human computer interaction; Indium gallium arsenide; Photoluminescence; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.639031
Filename :
639031
Link To Document :
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