Addressing challenges in device-circuit modeling for extreme environments of space

Author

Raman, Ashok ; Turowski, Marek ; Fedoseyev, Alex ; Cressler, John D.

Author_Institution

CFD Res. Corp., Huntsville

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

The authors have implemented a robust CNSPACK-based linear equation solver in an in-house TCAD tool. This solver is enhanced with efficient matrix pre-conditioning algorithms to enable accurate handling of a wide scale of floating-point numbers. Sample results are shown for very low temperature radiation response of a 0.12-mum NMOSFET and I-V curves of 0.13-mum SiGe HBT. The solution is very stable. However, the match against corresponding experimental data is not good due to inaccuracy of physical models (ongoing work).

Keywords

Ge-Si alloys; MOSFET; heterojunction bipolar transistors; technology CAD (electronics); CNSPACK-based linear equation solver; HBT; NMOSFET; SiGe; TCAD tool; device-circuit modeling; floating-point numbers; pre-conditioning algorithms; radiation response; size 0.12 mum; size 0.13 mum; Circuit simulation; Computational fluid dynamics; Educational institutions; Germanium silicon alloys; Radiation effects; Semiconductor device modeling; Silicon germanium; Solid modeling; Space technology; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422236

Filename

4422236