DocumentCode
2656323
Title
A 24.9-GHz emitter-degenerated SiGe bipolar VCO
Author
Zhan, Jing-Hong C. ; Duster, Jon S. ; Kornegay, Kevin T.
Author_Institution
Cornell Broadband Commun. Res. Lab., Cornell Univ., Ithaca, NY, USA
fYear
2003
fDate
28-30 Sept. 2003
Firstpage
71
Lastpage
74
Abstract
A 24.9-GHz emitter-degenerated VCO fabricated in IBM 6HP SiGe BiCMOS process with a -81dBc/Hz phase noise at 1-MHz offset is presented. It consumes 22mW on a 1.9V power supply including output buffers and occupies 435μm × 225μm of silicon area.
Keywords
bipolar integrated circuits; integrated circuit design; silicon compounds; voltage-controlled oscillators; 1 MHz; 1.9 V; 22 mW; 225 micron; 24.9 GHz; 435 micron; IBM 6HP BiCMOS process; SiGe; emitter-degenerated bipolar VCO; output buffers; phase noise; voltage-controlled oscillator; Bipolar integrated circuits; Integrated circuit design; Silicon compounds; Voltage controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN
1088-9299
Print_ISBN
0-7803-7800-8
Type
conf
DOI
10.1109/BIPOL.2003.1274938
Filename
1274938
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