Multi-mode multi-band tunable active inductor oscillators

Author

Rohde, Ulrich L. ; Poddar, Ajay K.

Author_Institution

BTU, Univ. of Cottbus, Cottbus, Germany

fYear

2011

fDate

2-5 May 2011

Firstpage

1

Lastpage

6

Abstract

A novel multi-band active inductor (AI) voltage controlled oscillator (VCO) is discussed and implemented using SiGe heterojunction bipolar transistors (HBTs). A design strategy centered on improving the locking range and broadband tunability of the transistorized tuned-inductor is being discussed and validated through an example of triple-band (0.9-1.8 GHz, 1.8-3.6 GHz, and 3.6-6.9 GHz) VCOs. Detailed analysis has been performed to minimize the phase noise by incorporating dynamic self-injection mechanism, and study the method of suppression of undesired modes in active inductor VCOs for current and later generation communication systems.

Keywords

Ge-Si alloys; UHF oscillators; circuit tuning; heterojunction bipolar transistors; inductors; microwave oscillators; phase noise; voltage-controlled oscillators; HBT; SiGe; broadband tunability; dynamic self-injection mechanism; frequency 0.9 GHz to 6.9 GHz; heterojunction bipolar transistor; multimode multiband tunable AIVCO; multimode multiband tunable active inductor voltage controlled oscillator; phase noise; transistorized tuned-inductor; undesired mode suppression method; Active inductors; Phase noise; Spirals; Switches; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International

Conference_Location

San Fransisco, CA

ISSN

1075-6787

Print_ISBN

978-1-61284-111-3

Type

conf

DOI

10.1109/FCS.2011.5977283

Filename

5977283