DocumentCode :
2656330
Title :
Multi-mode multi-band tunable active inductor oscillators
Author :
Rohde, Ulrich L. ; Poddar, Ajay K.
Author_Institution :
BTU, Univ. of Cottbus, Cottbus, Germany
fYear :
2011
fDate :
2-5 May 2011
Firstpage :
1
Lastpage :
6
Abstract :
A novel multi-band active inductor (AI) voltage controlled oscillator (VCO) is discussed and implemented using SiGe heterojunction bipolar transistors (HBTs). A design strategy centered on improving the locking range and broadband tunability of the transistorized tuned-inductor is being discussed and validated through an example of triple-band (0.9-1.8 GHz, 1.8-3.6 GHz, and 3.6-6.9 GHz) VCOs. Detailed analysis has been performed to minimize the phase noise by incorporating dynamic self-injection mechanism, and study the method of suppression of undesired modes in active inductor VCOs for current and later generation communication systems.
Keywords :
Ge-Si alloys; UHF oscillators; circuit tuning; heterojunction bipolar transistors; inductors; microwave oscillators; phase noise; voltage-controlled oscillators; HBT; SiGe; broadband tunability; dynamic self-injection mechanism; frequency 0.9 GHz to 6.9 GHz; heterojunction bipolar transistor; multimode multiband tunable AIVCO; multimode multiband tunable active inductor voltage controlled oscillator; phase noise; transistorized tuned-inductor; undesired mode suppression method; Active inductors; Phase noise; Spirals; Switches; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International
Conference_Location :
San Fransisco, CA
ISSN :
1075-6787
Print_ISBN :
978-1-61284-111-3
Type :
conf
DOI :
10.1109/FCS.2011.5977283
Filename :
5977283
Link To Document :
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