Title :
Static bipolar 11 GHz SiGe divider with 1V power supply
Author :
Rylov, Sergey ; Rylyakov, Alexander
Author_Institution :
T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Abstract :
A low-voltage static 1:2 divider using CML gates with a single-transistor switching stack was designed in a 0.18 μm SiGe BiCMOS technology. The divider operates at 11 GHz from 1.0V supply and 16.2 GHz from 1.4 V supply.
Keywords :
BiCMOS integrated circuits; current-mode logic; frequency dividers; integrated circuit design; silicon compounds; 0.18 micron; 1 V; 1.4 V; 11 GHz; 16.2 GHz; BiCMOS; CML gates; SiGe; common-mode logic; divider; power supply; single-transistor switching stack; static bipolar; BiCMOS integrated circuits; Current mode logic; Frequency conversion; Integrated circuit design; Silicon compounds;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274940
