• DocumentCode
    2656354
  • Title

    Static bipolar 11 GHz SiGe divider with 1V power supply

  • Author

    Rylov, Sergey ; Rylyakov, Alexander

  • Author_Institution
    T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    79
  • Lastpage
    81
  • Abstract
    A low-voltage static 1:2 divider using CML gates with a single-transistor switching stack was designed in a 0.18 μm SiGe BiCMOS technology. The divider operates at 11 GHz from 1.0V supply and 16.2 GHz from 1.4 V supply.
  • Keywords
    BiCMOS integrated circuits; current-mode logic; frequency dividers; integrated circuit design; silicon compounds; 0.18 micron; 1 V; 1.4 V; 11 GHz; 16.2 GHz; BiCMOS; CML gates; SiGe; common-mode logic; divider; power supply; single-transistor switching stack; static bipolar; BiCMOS integrated circuits; Current mode logic; Frequency conversion; Integrated circuit design; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274940
  • Filename
    1274940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656354