Quantum mechanical study of gate leakage current in double gate MOS structures

Using the Schrodinger-Poisson solver and the transmission line analogy, we have demonstrated an efficient technique for predicting direct tunneling gate leakage current for double gate MOS structures. As FEMLAB was used for solving the two equations, this technique is much faster than the conventional tools. Specifically the model can be used for modeling the tunneling currents for the substrate inversion layer of MOS devices, especially for ultra thin oxides below 1.5 nm where accurate modeling at low bias levels is critical.