Title :
Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices
Author :
Fu, C.H. ; Chang-Liao, K.S. ; Chuang, H.C. ; Wang, T.K. ; Huang, S.F. ; Tsai, W.F. ; Ai, C.F.
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
Abstract :
The electrical characteristics of high-k gated MOS devices can be improved by a nitridation treatment using plasma immersion ion implantation (PHI). The suitable process conditions for PHI treatment are at a low ion energy and with a short implantation time.
Keywords :
MIS devices; plasma immersion ion implantation; PHI; electrical characteristics; high-k gated MOS devices; nitridation treatment; nitrogen incorporation; plasma immersion ion implantation; Annealing; Channel bank filters; Electric variables; High K dielectric materials; High-K gate dielectrics; Impurities; Leakage current; MOS devices; Nitrogen; Plasma immersion ion implantation;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422241
