Title :
Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect
Author :
Chen, Zhi ; Ong, Pangleen ; Samantaray, Chandan B.
Author_Institution :
Univ. of Kentucky, Lexington
Abstract :
In this abstract, we will present, for the first time, a TEM image of a RTP-processed SiO2 sample to confirm the authenticity of the PECE effect. We will show the key factor that generates the PECE effect and study the leakage current reduction of HfSiON.
Keywords :
hafnium compounds; high-k dielectric thin films; leakage currents; rapid thermal processing; silicon compounds; transmission electron microscopy; HfSiON; PECE effect; RTP; SiO2; TEM image; high k oxides; leakage current reduction; phonon energy coupling enhancement effect; Capacitance-voltage characteristics; Channel bank filters; Chemicals; Educational institutions; Hafnium; Helium; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422242
