Title :
SiGe bipolar technology with 3.9 ps gate delay
Author :
Meister, T.F. ; Schafer, Henrik ; Aufinger, K. ; Stengl, R. ; Boguth, S. ; Schreiter, R. ; Rest, M. ; Knapp, H. ; Wurzer, M. ; Mitchell, A. ; Bottner, T. ; Bock, J.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A SiGe bipolar technology for future high frequency applications is presented. A cut-off frequency of 206 GHz and a maximum oscillation frequency of 197 GHz combined with a gate delay of 3.9 ps have been obtained. With a 86 GHz static frequency divider and a 110 GHz dynamic frequency divider state of the art high-speed circuits are achieved.
Keywords :
bipolar transistors; frequency dividers; semiconductor device manufacture; silicon compounds; 110 GHz; 197 GHz; 206 GHz; 3.9 ps; 86 GHz; SiGe; bipolar technology; cut-off frequency; dynamic frequency divider; gate delay; high-speed circuits; oscillation frequency; static frequency divider; Bipolar transistors; Frequency conversion; Semiconductor device manufacture; Silicon compounds;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274945
