DocumentCode :
2656450
Title :
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
Author :
Chang, Y.C. ; Huang, M.L. ; Lee, Y.J. ; Lee, K.Y. ; Lin, T.D. ; Hong, M. ; Kwo, J. ; Liao, C.C. ; Cheng, K.Y. ; Lay, T.S.
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, there is no surface cleaning and interfacial passivation layer prior to the ALD-HfO2. However, the oxide/InGaAs interface is atomically sharp without the existence of arsenic oxides, strongly indicating self-cleaning of the ALD process. Excellent well-behaved J-EG and C-V characteristics of ALD-HfO2/In0.53Ga0.47As/InP have been demonstrated in this work.
Keywords :
III-V semiconductors; MOSFET; atomic layer deposition; hafnium compounds; indium compounds; ALD process; ALD-HfO2; HfO2; In0.53Ga0.47As-InP; InGaAs n-MOS devices; atomic layer deposition process; metal gate; self-cleaning; Atomic layer deposition; Atomic measurements; Capacitance-voltage characteristics; Educational institutions; Gallium arsenide; Hafnium oxide; Indium gallium arsenide; Indium phosphide; Passivation; Surface cleaning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422243
Filename :
4422243
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2656450
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