Title :
Electrical properties of HfO2/InAs MOS capacitors
Author :
Wheeler, Dana ; Seabaugh, Alan ; Froberg, Linus ; Thelander, Claes ; Wernersson, Lars-Erik
Author_Institution :
Univ. of Notre Dame, Notre Dame
Abstract :
In this work, the first investigation of Au/Ti/HfO2/InAs metal-oxide-semiconductor capacitors is reported. The HfO2 is deposited by atomic layer deposition and characterized by current-voltage and capacitance-voltage measurements. The effects of surface treatment, deposition temperature, post-deposition anneal, and film thickness on breakdown field, leakage current, capacitance, and frequency dispersion are studied with the aim of producing HfO2-InAs interfaces suitable for use in InAs-channel MOSFETs.
Keywords :
III-V semiconductors; MOS capacitors; annealing; atomic layer deposition; capacitance; dielectric thin films; gold; hafnium compounds; indium compounds; leakage currents; semiconductor device breakdown; surface treatment; thin film capacitors; titanium; Au-Ti-HfO2-InAs; InAs-channel MOSFET; MOS capacitors; atomic layer deposition; breakdown field; capacitance-voltage measurements; current-voltage measurements; deposition temperature; electrical properties; film thickness; frequency dispersion; leakage current; metal-oxide-semiconductor capacitors; post-deposition anneal; surface treatment; Atomic layer deposition; Atomic measurements; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Current measurement; Gold; Hafnium oxide; Surface treatment; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422244
