Title :
Vertical profile optimisation of a self-aligned SiGeC HBT process with an n-cap emitter
Author :
Donkers, J.J.T.M. ; Magnée, P. H C ; Huizing, H.G.A. ; Agarwal, P. ; Aksen, E. ; Meunier-Beillard, P. ; Neuilly, F. ; Havens, R.J. ; Vanhoucke, T.
Author_Institution :
Philips Res. Leuven, Belgium
Abstract :
SiGeC heterojunction bipolar transistors (HBTs) with a cut-off frequency of fT>150GHz, have been realised with an n-type emitter cap, using a self-aligned integration scheme. Device simulations were used to tune the emitter base side of the non-selective epitaxially grown SiGeC layer. The experimental results are in very good agreement with the predictions.
Keywords :
carbon; circuit optimisation; heterojunction bipolar transistors; integrated circuit manufacture; semiconductor process modelling; silicon compounds; SiGe:C; cut-off frequency; device simulations; emitter base tuning; heterojunction bipolar transistors; n-type emitter cap; nonselective epitaxially grown layer; self-aligned HBT process; self-aligned integration; vertical profile optimisation; Carbon; Circuit optimization; Heterojunction bipolar transistors; Integrated circuit manufacture; Semiconductor process modeling; Silicon compounds;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274947
