Title :
Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers
Author :
Lim, Andy Eu-Jin ; Fang, Wei-Wei ; Liu, Fangyue ; Lee, Rinus T P ; Samudra, Ganesh S. ; Kwong, Dim-Lee ; Yeo, Yee-Chia
Author_Institution :
Nat. Univ. of Singapore (NUS), Singapore
Abstract :
A quantitative RE-O interface dipole model was presented to explain Ni-FUSI Phim using RE-based interlayers (REIL). The expected strengths of interface RE-O dipole and extracted Phim values show excellent correlation. It further demonstrates that the NiSi Phim on high- k dielectrics can be engineered by the insertion of thin REIL at the high-k/SiO2 interface.
Keywords :
CMOS integrated circuits; MOSFET; dielectric materials; rare earth metals; silicon compounds; CMOS metal gate integration; NMOS Ni-FUSI gate function; RE-O interface dipole mechanism; RE-based interlayers; SiO2; high- k dielectrics; nickel fully silicided gate; rare-earth metal -based dielectric interlayers; Bonding; Channel bank filters; Educational institutions; Erbium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS devices; Microelectronics; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422245
