Conversion of the PACE1750A CMOS chip set to silicon on sapphire [for military equipment]

Author

Fitzpatrick, M.D. ; Adams, D.A. ; Austin, M. ; Uehara, D.T. ; Jones, K.A. ; Konegen, R.R. ; Longo, T.A. ; Sandman, L.

Author_Institution

Westinghouse Electr. Corp., Baltimore, MD, USA

fYear

1989

fDate

3-5 Oct 1989

Firstpage

103

Lastpage

104

Abstract

Summary form only given. The conversion of CMOS/epi designs for a MIL-STD-1750A chip set to CMOS/SOS using the BITECH CAD software is discussed. CMOS/SOS circuit functionality was verified at probe and after assembly, and characterization testing verified the SOS circuits to be form, fit and functionally equivalent to the CMOS/epi material previously produced. Characterization test results show that some packaged units exceed the full military temperature/voltage range requirements. The characterization test results were further verified by user insertion testing which demonstrated that the 1750A CMOS/SOS chip set devices were direct plug-in replacements for their CMOS/epi counterparts in existing application hardware

Keywords

CMOS integrated circuits; circuit CAD; integrated circuit testing; military equipment; semiconductor-insulator boundaries; BITECH CAD software; CMOS/SOS; MIL-STD-1750A chip set; PACE1750A CMOS chip; Si-Al₂O₃; characterization testing; circuit functionality; conversion; direct plug-in replacements; insertion testing; military temperature/voltage range requirements; Assembly; Circuit testing; Design automation; Hardware; Materials testing; Packaging; Probes; Silicon; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69787

Filename

69787