Title :
Barrier height modulation and dipole moments in metal-molecule-silicon diodes
Author :
Scott, Adina ; Risko, Chad ; Ratner, Mark A. ; Janes, David B.
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
In this study, Schottky barrier height in a series of gold-molecule-n Si diodes has been determined by reverse-bias capacitance-voltage measurements. Trends in measured barrier height correlate with calculated molecular dipoles. Samples were prepared by electrochemically grafting para-substituted aryl-diazonium salts on n-type silicon substrates. Bromobenzene (B-benz), diethylaminobenzene (D-benz), 2-methyl 4-nitrobenzene (FRS), methoxybenzene (M-benz), and nitrobenzene (N-benz) molecular layers were used.
Keywords :
Schottky barriers; Schottky diodes; capacitance; elemental semiconductors; gold; molecular electronics; molecular moments; organic compounds; silicon; 2-methyl 4-nitrobenzene; Au-Si; Schottky barrier height; barrier height modulation; bromobenzene; diethylaminobenzene; electrochemical grafting; metal-molecule-silicon diodes; methoxybenzene; molecular dipole moments; molecular layers; n-type silicon substrates; nitrobenzene; para-substituted aryl-diazonium salts; reverse-bias capacitance-voltage measurements; Capacitance measurement; Capacitance-voltage characteristics; Educational institutions; Electrostatic measurements; Etching; Extraterrestrial measurements; Gold; Schottky diodes; Semiconductor diodes; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422248
