Title :
Thermal resistance of (H)BTs on bulk Si, SOI and glass
Author :
Van Noort, Wiho D. ; Dekker, R.
Author_Institution :
Philips Res. Leuven, Belgium
Abstract :
Thermal resistance of SiGe HBTs and Si BJTs on bulk silicon, SOI, and glass is investigated. The analysis includes self- and mutual heating. It is shown that a "floating" 10 μm thick Cu island in close proximity to the device is already very effective to reduce the thermal resistance. A comprehensive method of thermal resistance extraction is presented.
Keywords :
copper; elemental semiconductors; heterojunction bipolar transistors; semiconductor device measurement; silicon; silicon-on-insulator; thermal resistance measurement; 10 micron; BJT; Cu; HBT; SOI; Si; SiGe; bipolar junction transistor; bulk silicon; glass; heterojunction bipolar transistor; mutual heating; self-heating; silicon-on-insulator; substrate transfer; thermal resistance extraction; Copper; Heterojunction bipolar transistors; Silicon; Silicon on insulator technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274951
