Title :
Effects of oxygen content on the structural and sensing properties of Y203 sensing membrane for pH-ISFET application
Author :
Pan, Tung-Ming ; Liao, Kao-Ming ; Yen, Li-Chen ; Hsieh, Yu-Yi ; Chen, Yue-Zhang
Author_Institution :
Chang Gting Univ., Taoyuan
Abstract :
In this paper, we reported an Y2O3 gate sensing membrane prepared under three flow conditions and deposited on Si substrate by rf sputtering. The optimal conditions were found to be an argon-to-oxygen flow ratio of 25/5 and an annealing temperature of 800 degC. In that case, the physical vapor deposition films are the reduction of lower-k interfacial layer and Y-silicate film formation from XPS and the smoothest of surface roughness from AFM. The high-k Y2O3 EOS exhibits a high sensitivity, a small drift rate and a low hysteresis voltage.
Keywords :
X-ray photoelectron spectra; atomic force microscopy; ion sensitive field effect transistors; silicon; sputtering; substrates; surface roughness; yttrium compounds; AFM; RF sputtering; Si; XPS; Y2O3; gate sensing membrane; low hysteresis voltage; oxygen content effect; pH-ISFET; physical vapor deposition films; silicon substrate; surface roughness; temperature 800 C; Annealing; Biomembranes; Chemical vapor deposition; High K dielectric materials; High-K gate dielectrics; Rough surfaces; Sputtering; Substrates; Surface roughness; Temperature sensors;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422250
