Effects of oxygen content on the structural and sensing properties of Y203 sensing membrane for pH-ISFET application

Author

Pan, Tung-Ming ; Liao, Kao-Ming ; Yen, Li-Chen ; Hsieh, Yu-Yi ; Chen, Yue-Zhang

Author_Institution

Chang Gting Univ., Taoyuan

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this paper, we reported an Y₂O₃ gate sensing membrane prepared under three flow conditions and deposited on Si substrate by rf sputtering. The optimal conditions were found to be an argon-to-oxygen flow ratio of 25/5 and an annealing temperature of 800 degC. In that case, the physical vapor deposition films are the reduction of lower-k interfacial layer and Y-silicate film formation from XPS and the smoothest of surface roughness from AFM. The high-k Y₂O₃ EOS exhibits a high sensitivity, a small drift rate and a low hysteresis voltage.

Keywords

X-ray photoelectron spectra; atomic force microscopy; ion sensitive field effect transistors; silicon; sputtering; substrates; surface roughness; yttrium compounds; AFM; RF sputtering; Si; XPS; Y₂O₃; gate sensing membrane; low hysteresis voltage; oxygen content effect; pH-ISFET; physical vapor deposition films; silicon substrate; surface roughness; temperature 800 C; Annealing; Biomembranes; Chemical vapor deposition; High K dielectric materials; High-K gate dielectrics; Rough surfaces; Sputtering; Substrates; Surface roughness; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422250

Filename

4422250