DocumentCode :
2656579
Title :
A low-voltage bandgap reference with resistive subdivision
Author :
Xing, Xu ; Xichuan, Wang ; Cuiying, Si
Author_Institution :
Microelectron. Res. & Dev. Center, Shanghai Univ.
fYear :
2006
fDate :
27-28 June 2006
Firstpage :
12
Lastpage :
15
Abstract :
In this paper, a sub IV bandgap voltage reference (BGR) with resistive subdivision in CMOS technology is described. The proposed topology is based on the combination of two elements´ voltages of opposite temperature coefficients. By using resistive subdivision methods, maximum input voltage of a p-channel input operational amplifier can be reduced and the problem of sub IV supply voltage is solved without complex low supply voltage amplifier. Inserting a capacitance Cc to ground at VREF can result in an improvement in power supply rejection ratio. The proposed circuit was verified by spectre simulations, using standard 0.25 mum CMOS process, and the results show that the presented bandgap reference can successfully operate at sub IV supply and has a temperature coefficient of 25ppm/degC over a temperature range from 0degC to 100degC. The power supply rejection ratio (PSRR) is high at low frequencies, and an added Cc is helpful for PSRR at high frequencies
Keywords :
CMOS analogue integrated circuits; energy gap; integrated circuit design; low-power electronics; reference circuits; 0 to 100 C; 0.25 micron; CMOS technology; low-voltage band gap reference; power supply rejection ratio; resistive subdivision; sub IV bandgap voltage reference; CMOS technology; Capacitance; Frequency; Land surface temperature; Low voltage; Operational amplifiers; Photonic band gap; Power supplies; Temperature distribution; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06. Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0488-6
Type :
conf
DOI :
10.1109/HDP.2006.1707557
Filename :
1707557
Link To Document :
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