Title :
Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator
Author :
Tang, W.M. ; Leung, C.H. ; Lai, P.T.
Author_Institution :
Univ. of Hong Kong, Hong Kong
Abstract :
A novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300degC. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO2 for preparing high-performance MISiC Schottky hydrogen sensor.
Keywords :
MIS devices; Schottky diodes; gas sensors; hafnium compounds; high-k dielectric thin films; hydrogen; leak detection; sensitivity; silicon compounds; HfO2; Metal-Insulator-SiC; SiC; gate insulator; high-k material; leakage detection; metal-insulator Schottky-diode hydrogen sensor; sensitivity; temperature 300 C; Electrodes; Gas detectors; Hafnium oxide; Hydrogen; Insulation; Polarization; Sensor phenomena and characterization; Sputtering; Substrates; Temperature sensors;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422251
