Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator

Author

Tang, W.M. ; Leung, C.H. ; Lai, P.T.

Author_Institution

Univ. of Hong Kong, Hong Kong

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

A novel Schottky-diode hydrogen sensor with high-k material HfO₂ as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300degC. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO₂ is a promising gate insulator to substitute SiO₂ for preparing high-performance MISiC Schottky hydrogen sensor.

Keywords

MIS devices; Schottky diodes; gas sensors; hafnium compounds; high-k dielectric thin films; hydrogen; leak detection; sensitivity; silicon compounds; HfO₂; Metal-Insulator-SiC; SiC; gate insulator; high-k material; leakage detection; metal-insulator Schottky-diode hydrogen sensor; sensitivity; temperature 300 C; Electrodes; Gas detectors; Hafnium oxide; Hydrogen; Insulation; Polarization; Sensor phenomena and characterization; Sputtering; Substrates; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422251

Filename

4422251