Title :
Curvature-compensated CMOS bandgap reference with 1.8-V operation
Author :
Xichuan, Wang ; Cuiying, Si ; Xing, Xu
Author_Institution :
Microelectron. Res. & Dev. Center, Shanghai Univ.
Abstract :
The typical current mode bandgap voltage circuit is built up by two currents, one is proportional to VBE across the base-emitter of the parasitic BJT in CMOS process, the other is proportional to VT. The negative temperature coefficient of the former term compensates the positive temperature coefficient of the latter. But the temperature dependence of VBE is not linear and therefore doesn´t completely cancel the linear temperature dependence of DeltaVBE, which is proportional to absolute temperature (PTAT). A curvature-compensated bandgap reference (BGR) with 1.8-V supply voltage is presented, which utilizes the different temperature-dependent emitter of the BJT to obtain the nonlinear current INL to cancel the nonlinear term of IVBE. The simulation results indicate the temperature coefficient (TC) of 8ppm/ degC from -40 degC to 80 degC and a higher power supply rejection ration (PSRR) using 0.18mum CMOS process. A scaled-down bandgap reference voltage can also be obtained by setting the resistor and current mirror in the proposed BGR circuit
Keywords :
CMOS integrated circuits; energy gap; integrated circuit design; low-power electronics; reference circuits; -40 to 80 C; 0.18 micron; 1.8 V; BJT; absolute temperature; current mode bandgap voltage circuit; curvature-compensated CMOS band gap reference; negative temperature coefficient; positive temperature coefficient; power supply rejection ration; CMOS process; CMOS technology; Circuits; Low voltage; Mirrors; Operational amplifiers; Photonic band gap; Power supplies; Resistors; Temperature dependence;
Conference_Titel :
High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06. Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0488-6
DOI :
10.1109/HDP.2006.1707559