Simulation of silicon nanowire tunneling field-effect transistors including quantum effects

To reduce the short channel effects in modern nanoscale MOS-devices alternative device concepts like the tunneling field effect transistor have been suggested (Hansch et al., 2000). Since the complete current is sustained by tunneling processes, these devices obey different design rules than MOSFETs. Another interesting approach is the use of multigate structures. A very promising idea is the combination of these two concepts. Using two-dimensional device simulations, we investigate the performance of such cylindrical nanowire tunneling transistors.