Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance

Silicon nano-wire impact ionization multiple-gate field-effect transistor (i-mugfet or I-FinFET) with excellent subthreshold swing of less than 5 mV/decade at room temperature were demonstrated. Both n- and p- channel I-FinFET devices were realized. The multiple-gate structure enhances the gate-to-channel coupling effect and the impact-ionization rate in the fin or nanowire channel, thereby reducing the breakdown voltage and giving excellent device performance.