Title :
High-Q integrated RF passives and micromechanical capacitors on silicon
Author :
van Beek, J.T.M. ; van Delden, M.H.W.M. ; van Dijken ; van Eerd, P. ; van Grootel, M. ; Jansman, A.B.M. ; Kemmeren, A.L.A.M. ; Rij, Th G S M ; Steeneken, Peter G. ; Toonder, J. Den ; Ulenaers, M. ; Dekker, A. Den ; Lok, P. ; Pulsford, N. ; van Straten, F.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
The PASSI™ technology platform is described for the integration of low-loss inductors, capacitors, and MEMS on high-ohmic Si substrates. Using this platform the board space area taken up by e.g. impedance matching circuits can be reduced by 50%. The losses of passives induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and e-beam irradiation. The incorporation of MEM tuneable capacitors in high-Q inductor-capacitor networks is demonstrated.
Keywords :
Q-factor; capacitors; elemental semiconductors; inductors; micromechanical devices; passive networks; silicon; MEM tuneable capacitors; MEMS; PASSI technology platform; board space area; capacitor integration; e-beam irradiation; high-Q inductor-capacitor networks; high-Q integrated RF passives; impedance matching circuits; low-loss inductor integration; micromechanical capacitors; passive loss; surface amorphisation; Capacitors; Inductors; Microelectromechanical devices; Passive circuits; Q factor; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274955
