Title :
Device and circuit modeling using novel 3-state quantum dot gate FETs
Author :
Jain, F.C. ; Heller, E. ; Karmakar, S. ; Chandy, J.
Author_Institution :
Univ. of Connecticut, Storrs
Abstract :
This paper presents simulation of three-state behavior recently reported in quantum dot gate field-effect transistor (FET) structures. The model self-consistently solves Schrodinger and Poisson equations with built-in transfer of carriers from the inversion channel to two layers of cladded SiOx-Si quantum dots (QDs) forming the gate, predicting the "intermediate state" in the transfer Id-Vg characteristic. Circuit model and simulations for a 3-bit ADC are also presented.
Keywords :
Poisson equation; Schrodinger equation; field effect transistors; quantum dots; 3-bit ADC; 3-state quantum dot gate FET; Poisson equations; Schrodinger equations; circuit model-simulations; field-effect transistor; CMOS logic circuits; Circuit simulation; Computational modeling; Computer simulation; Educational institutions; FETs; Predictive models; Quantum computing; Quantum dots; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422254
