Poly-silicon quantum dot single electron transistors

For room temperature operation and reproducibility of single electron transistors (SETs), we propose a fabrication method of an SET with a self-aligned quantum dot. The quantum dot is formed by selective etch of a silicon nanowire on a planarized surface and subsequent deposition and etch-back of poly-silicon. The device is named as PQD-SET, i.e., poly-silicon quantum dot SET. PQD-SET shows clear Coulomb oscillation at room temperature.