Title :
Improving BiCMOS technologies using BJT parametric mismatch characterisation
Author :
Tuinhout, Hans P.
Author_Institution :
Philips Res., Eindhoven, Netherlands
Abstract :
Why and how can parametric mismatch studies help to improve IC-technologies? After an introduction on the importance of parametric mismatch for performance and yield of mixed-signal as well as digital technologies, the basic terminology and techniques for BJT mismatch fluctuation assessment are reviewed. Two examples are discussed to demonstrate how parametric mismatch fluctuation studies help to improve better device architecture of poly-emitter BJTs. The ensuing process refinements result in better circuit functionality as well as yield improvements.
Keywords :
BiCMOS integrated circuits; bipolar transistors; circuit optimisation; integrated circuit yield; BJT parametric mismatch; BiCMOS; bipolar junction transistor; device architecture; digital technology; integrated circuit functionality; integrated circuit yield; mixed-signal; parametric mismatch fluctuation; poly-emitter BJT; BiCMOS integrated circuits; Bipolar transistors; Circuit optimization; Yield estimation;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274959
