Title :
Proton-induced SEU in SiGe digital logic at cryogenic temperatures
Author :
Sutton, Akil K. ; Cressler, John D. ; Carts, Martin A. ; Marshall, Paul W. ; Pellish, Jonathan A. ; Reed, Robert A. ; Alles, Michael L. ; Niu, Guofu
Author_Institution :
Georgia Inst. of Technol., Atlanta
Abstract :
In this work we present, for the first time, experimental results confirming an increase in single event upset (SEU) susceptibility at cold temperatures using 63 MeV protons incident on liquid-nitrogen immersed 16-bit shift registers. Silicon germanium (SiGe) BiCMOS technology has the potential to be a key platform for extreme environment electronics due to its record (Si-based) cryogenic performance and built-in multi-Mrad (SiO2) total ionizing dose (TID) tolerance.
Keywords :
BiCMOS logic circuits; Ge-Si alloys; cryogenic electronics; proton effects; shift registers; BiCMOS technology; SiGe; cryogenic temperatures; digital logic; electron volt energy 63 MeV; liquid-nitrogen immersed 16-bit shift registers; proton-induced single event upset susceptibility; total ionizing dose tolerance; Circuit testing; Cooling; Cryogenics; Germanium silicon alloys; Logic; Protons; Shift registers; Silicon germanium; Single event upset; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422261
