High resistivity material for mitigating linear energy transfer sensitivities in highly scaled Cmos Sram cells

Author

Kanyogoro, Esau ; Peckerar, Martin ; Hughes, Harold ; Liu, Mike

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

This paper presents the fabrication of Al_1-xIn_xN film to mitigate single event upsets in highly scaled CMOS technologies by developing resistors whose magnitude of resistance can be completely determined by the amount and type of defects in the film. If implemented, Al_1-xIn_xN film resistor could enable the use of feedback resistor and capacitor cross-coupling latch technique to be employed in 90 nanometer node and below.

Keywords

CMOS memory circuits; SRAM chips; aluminium compounds; circuit feedback; electrical resistivity; indium compounds; sensitivity; thin film resistors; Al_1-xIn_xN; CMOS SRAM cells; capacitor cross-coupling latch technique; feedback resistor; film fabrication; high resistivity material; linear energy transfer sensitivity; single event upset mitigation; size 90 nm; thin film resistors; Aerospace materials; Aluminum; Conductivity; Educational institutions; Electric resistance; Electrons; Energy exchange; Nitrogen; Resistors; Single event upset;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422262

Filename

4422262