Title :
High resistivity material for mitigating linear energy transfer sensitivities in highly scaled Cmos Sram cells
Author :
Kanyogoro, Esau ; Peckerar, Martin ; Hughes, Harold ; Liu, Mike
Abstract :
This paper presents the fabrication of Al1-xInxN film to mitigate single event upsets in highly scaled CMOS technologies by developing resistors whose magnitude of resistance can be completely determined by the amount and type of defects in the film. If implemented, Al1-xInxN film resistor could enable the use of feedback resistor and capacitor cross-coupling latch technique to be employed in 90 nanometer node and below.
Keywords :
CMOS memory circuits; SRAM chips; aluminium compounds; circuit feedback; electrical resistivity; indium compounds; sensitivity; thin film resistors; Al1-xInxN; CMOS SRAM cells; capacitor cross-coupling latch technique; feedback resistor; film fabrication; high resistivity material; linear energy transfer sensitivity; single event upset mitigation; size 90 nm; thin film resistors; Aerospace materials; Aluminum; Conductivity; Educational institutions; Electric resistance; Electrons; Energy exchange; Nitrogen; Resistors; Single event upset;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422262
