DocumentCode :
2656795
Title :
A 0.13 μm BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT
Author :
Orner, B.A. ; Liu, Q.Z. ; Rainey, B. ; Stricker, A. ; Geiss, P. ; Gray, P. ; Zierak, M. ; Gordon, M. ; Collins, D. ; Ramachandran, V. ; Hodge, W. ; Willets, C. ; Joseph, A. ; Dunn, J. ; Rieh, J.-S. ; Jeng, S.-J. ; Eld, E. ; Freeman, G. ; Ahlgren, D.
Author_Institution :
IBM Microelectron. Div., IBM, Essex Junction, VT, USA
fYear :
2003
fDate :
28-30 Sept. 2003
Firstpage :
203
Lastpage :
206
Abstract :
We present for the first time a very high performance SiGe HBT with fT = 200 GHz and fmax = 280 GHz that has been successfully integrated with IBM´s standard 0.13 μm foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.
Keywords :
BiCMOS integrated circuits; heterojunction bipolar transistors; semiconductor device manufacture; semiconductor device models; semiconductor process modelling; silicon compounds; 0.13 micron; 200 GHz; 280 GHz; BiCMOS 8HP technology; CMOS node; HBT; SiGe; heterojunction bipolar transistor; BiCMOS integrated circuits; Heterojunction bipolar transistors; Semiconductor device manufacture; Semiconductor device modeling; Semiconductor process modeling; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN :
1088-9299
Print_ISBN :
0-7803-7800-8
Type :
conf
DOI :
10.1109/BIPOL.2003.1274966
Filename :
1274966
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2656795
بازگشت