A high-k Y2TiO5 charge trapping layer for high-density flash memory application

Author

Pan, Tung-Ming ; Yeh, Wen-Wei ; Chang, Wei-Tsung ; Chen, Kai-Ming ; Chen, Jing-Wei ; Huang, Kuo-Chan

Author_Institution

Chang Gung Univ., Taoyuan

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this paper, high-k Y₂TiO₅ metal-oxide-high-k material-oxide-silicon type (MOHOS) memory fabricated through RF sputtering. The XRD, XPS, and AFM analyses indicate the formation of oxide/Y₂TiO₅/oxide memory after annealing at 900 degC. The electrical characteristics are in terms of 4.2 V memory window and long charge retention time due to deep trap level in the high-k Y₂TiO₅ layer.

Keywords

X-ray diffraction; X-ray photoelectron spectra; annealing; atomic force microscopy; elemental semiconductors; flash memories; high-k dielectric thin films; silicon; sputtering; yttrium compounds; AFM analysis; MOHOS memory circuit fabrication; RF sputtering; XPS analysis; XRD analysis; Y₂TiO₅-Si; annealing; charge retention time; dielectric film deposition; high-density flash memory applications; memory window; metal-oxide-high-k material-oxide-silicon type memory; temperature 900 C; voltage 4.2 V; Annealing; Bonding; Educational institutions; Electron traps; Flash memory; High K dielectric materials; High-K gate dielectrics; Sputtering; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422266

Filename

4422266