Modelling the correlation in the high-frequency noise of (hetero-junction) bipolar transistors using charge-partitioning

We give a compact model formulation that takes into account the correlation between the shot noise of the intrinsic base and collector currents of a bipolar transistor, based on the physical relation between noise and charge partitioning. We show that this improves the noise modelling of especially the minimum noise figure. We also indicate why changing the doping and Ge-profiles can lead to a better noise performance.