Title :
An examination of bipolar transistor noise modelling and noise physics using microscopic noise simulation
Author :
Cui, Yan ; Guofu Nui ; Harame, David L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
Abstract :
This paper examines bipolar transistor noise modelling and noise physics using microscopic noise simulation. Transistor terminal current and voltage noises resulting from velocity fluctuations of electrons and holes in the base, emitter, collector, and substrate are simulated using a new technique, and compared with modelling results. The relevant importance as well as model-simulation discrepancy is analyzed for each physical noise source.
Keywords :
bipolar transistors; circuit simulation; semiconductor device models; semiconductor device noise; base; bipolar transistor noise modelling; collector; electrons; emitter; holes; microscopic noise simulation; model-simulation discrepancy; noise physics; noise source; substrate; transistor terminal current; velocity fluctuations; voltage noises; Bipolar transistors; Semiconductor device modeling; Semiconductor device noise;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274971
