Effects of thermosonic bonding parameters on flip chip LEDs

Author

Zhao, Kun ; Jia, Lei ; Duan, Ji An ; Zhang, Jianhua

Author_Institution

Sch. of Mechatronics Eng. & Autom., Shanghai Univ.

fYear

2006

fDate

27-28 June 2006

Firstpage

101

Lastpage

107

Abstract

The effects of thermosonic bonding parameters on GaN-based light emitting diodes (LEDs) with flip chip structure were investigated. Experiments with different thermosonic bonding parameters were conducted to optimize the flip chip process during production flow. These thermosonic bonding parameters on LEDs involved different bonding temperatures, different bonding force, and different ultrasonic power. This paper represents these parameters´ effects on flip chip bonding strength by thermosonic gold ball bonding

Keywords

III-V semiconductors; flip-chip devices; gallium compounds; lead bonding; light emitting diodes; optimised production technology; ultrasonic bonding; wide band gap semiconductors; GaN; bonding force; bonding temperature; flip chip LED; flip chip process optimization; flip chip structure; light emitting diodes; production flow; thermosonic bonding parameters; thermosonic gold ball bonding; ultrasonic power; Bonding forces; Brightness; Flip chip; Gold; Light emitting diodes; Liquid crystal displays; Metallization; Optical materials; Packaging; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06. Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0488-6

Type

conf

DOI

10.1109/HDP.2006.1707574

Filename

1707574