Effects of Gate-Edge Metamorphoses (GEM) on device characteristics of scaled MOSFETs

Author

Yamada, Tatsuya ; Sano, Nobuyuki

Author_Institution

Univ. of Tsukuba, Tsukuba

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

The continual downscaling of Si-MOSFETs requires the replacement of polycrystalline Si (poly-Si) gate electrodes by metal gate, which avoids such problems of poly-Si gate as gate depletion effects and/or dopant penetration effects. However, it has been reported that the properties of edges of metal gate could metamorphose after high temperature annealing. As a result, threshold voltage varies due to the difference of the work function resulted from the gate edge metamorphose. In this paper, we investigate the effects of GEM on threshold voltage characteristics of MOSFETs via drift-diffusion simulations and clarify the physical mechanism of device property variation.

Keywords

MOSFET; annealing; carrier lifetime; elemental semiconductors; silicon; work function; MOSFET; Si; dopant penetration effects; drift-diffusion simulation; gate depletion effects; gate-edge metamorphose effects; high-temperature annealing; metal gate electrodes; threshold voltage characteristics; work function; Annealing; Charge carrier density; Educational institutions; Electrodes; MOSFET circuits; Mechanical factors; Physics; Stress; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422268

Filename

4422268