Title :
Effects of Gate-Edge Metamorphoses (GEM) on device characteristics of scaled MOSFETs
Author :
Yamada, Tatsuya ; Sano, Nobuyuki
Author_Institution :
Univ. of Tsukuba, Tsukuba
Abstract :
The continual downscaling of Si-MOSFETs requires the replacement of polycrystalline Si (poly-Si) gate electrodes by metal gate, which avoids such problems of poly-Si gate as gate depletion effects and/or dopant penetration effects. However, it has been reported that the properties of edges of metal gate could metamorphose after high temperature annealing. As a result, threshold voltage varies due to the difference of the work function resulted from the gate edge metamorphose. In this paper, we investigate the effects of GEM on threshold voltage characteristics of MOSFETs via drift-diffusion simulations and clarify the physical mechanism of device property variation.
Keywords :
MOSFET; annealing; carrier lifetime; elemental semiconductors; silicon; work function; MOSFET; Si; dopant penetration effects; drift-diffusion simulation; gate depletion effects; gate-edge metamorphose effects; high-temperature annealing; metal gate electrodes; threshold voltage characteristics; work function; Annealing; Charge carrier density; Educational institutions; Electrodes; MOSFET circuits; Mechanical factors; Physics; Stress; Temperature; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422268
