Title :
An improved method for determining the transit time of Si/SiGe bipolar transistors
Author :
Malorny, M. ; Schroter, M. ; Celi, D. ; Berger, D.
Author_Institution :
Electron Devices & Integrated Circuits, Dresden Univ. of Technol., Germany
Abstract :
An improved method for determining the transit time and forward-bias base emitter depletion is presented. The method has been verified and applied to experimental data of advanced Si/SiGe HBTs.
Keywords :
bipolar transistors; semiconductor device measurement; silicon compounds; HBT; SiGe; bipolar transistor; forward-bias base emitter depletion; transit time; Bipolar transistors; Silicon compounds;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274972
