Title :
A quantum mechanical model of gate leakage current for scaled NMOS transistors with ultra-thin High-K dielectrics and metal gate electrodes
Author :
Zhang, Yanli ; Jin, Zhian ; Wang, Gan ; Liyanage, Luckshitha S. ; White, Marvin H.
Author_Institution :
Lehigh Univ., Bethlehem
Abstract :
This paper develops a quantum mechanical model for gate leakage current in scaled high-K metal-gate,NMOS transistors by considering both DT and TAT in low gate voltage regions,which can also be applied to other dual dielectric layer systems. The tunneling current is very sensitive to the low dielectric constant layer thickness. The proper control of the interfacial layer is important to continue CMOS device scaling.
Keywords :
MOSFET; leakage currents; tunnelling; CMOS device scaling; NMOS transistors; gate leakage current; metal gate electrodes; quantum mechanical model; tunneling current; ultra-thin high-k dielectrics; Current density; Dielectric substrates; Electrodes; Electrons; Hafnium oxide; High-K gate dielectrics; Leakage current; MOSFETs; Quantum mechanics; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422269
