DocumentCode
2656919
Title
Impact of local poly-Si gate depletion on Vth variation in nanoscale MOSFETs investigated by 3D device simulation
Author
Putra, A.T. ; Nishida, A. ; Kamohara, S. ; Tsunomura, T. ; Hiramoto, T.
Author_Institution
Univ. of Tokyo, Tokyo
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
We have developed a model to evaluate the impact of local gate depletion on Vth variation. Our model realizes that when a large grain exists in a gate, Vth becomes high, which support the measured data. The sizes (L & W) dependences of Vth distributions due to the local gate depletion are also investigated and the averaging effect works in wide channel MOSFETs. We are going to use this model to clarify the Vth variation in MOSFETs quantitatively in future work.
Keywords
MOSFET; circuit CAD; nanoelectronics; 3D device simulation; local gate depletion; metal-oxide-semiconductor field effect transistor; nanoscale MOSFET; Educational institutions; Electrodes; Fluctuations; Gaussian distribution; Grain boundaries; Grain size; Impurities; MOSFETs; Nanoscale devices; Position measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422270
Filename
4422270
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