• DocumentCode
    2656962
  • Title

    Investigation of a MOSCAP using NEGF

  • Author

    Karner, M. ; Baumgartner, O. ; Pourfath, M. ; Vasicek, M. ; Kosina, H.

  • Author_Institution
    TU Vienna, Vienna
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An analysis of the MOSCAP has been carried out using the non-equilibrium Green´s function formalism. The gate and the bulk regions have been assumed to be in thermal equilibrium which implies a constant Fermi energy epsivFG and epsivFB, respectively. The leakage current through the gate oxide, which separates the equilibrium regions, has been calculated assuming ballistic transport between the two reservoirs ( Lake et al., 1997, Svizhenko et al., 2002)
  • Keywords
    Fermi level; Green´s function methods; MOS capacitors; leakage currents; MOS capacitors; MOSCAP; NEGF; ballistic transport; constant Fermi energy; leakage current; nonequilibrium Green´s function; thermal equilibrium; Charge carrier lifetime; Educational institutions; Green´s function methods; Heart; Leakage current; MOS capacitors; Microelectronics; Optical scattering; Quantum mechanics; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422272
  • Filename
    4422272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656962