Title :
Investigation of a MOSCAP using NEGF
Author :
Karner, M. ; Baumgartner, O. ; Pourfath, M. ; Vasicek, M. ; Kosina, H.
Author_Institution :
TU Vienna, Vienna
Abstract :
An analysis of the MOSCAP has been carried out using the non-equilibrium Green´s function formalism. The gate and the bulk regions have been assumed to be in thermal equilibrium which implies a constant Fermi energy epsivFG and epsivFB, respectively. The leakage current through the gate oxide, which separates the equilibrium regions, has been calculated assuming ballistic transport between the two reservoirs ( Lake et al., 1997, Svizhenko et al., 2002)
Keywords :
Fermi level; Green´s function methods; MOS capacitors; leakage currents; MOS capacitors; MOSCAP; NEGF; ballistic transport; constant Fermi energy; leakage current; nonequilibrium Green´s function; thermal equilibrium; Charge carrier lifetime; Educational institutions; Green´s function methods; Heart; Leakage current; MOS capacitors; Microelectronics; Optical scattering; Quantum mechanics; Resonance;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422272
