Title :
New EEPROM concept for single bit operation
Author :
Raguet, J.R. ; Bidal, V. ; Regnier, A. ; Mirabel, J.M. ; Laffont, R. ; Bouchakour, R.
Author_Institution :
STMicroelectronics, Rousset
Abstract :
This paper presents a new small EEPROM memory with dual-control gate which allows high density memory application with single bit operations. This new architecture is based on a previous work proposed by Regnier et al. in 2004. The specificity was to use a dual-control gate EEPROM in order to control the coupling ratio on floating gate and so perform the memory operations without select transistor.
Keywords :
EPROM; EEPROM memory; dual control gate; high density memory application; single bit operation; Current measurement; EPROM; Educational institutions; Etching; Intrusion detection; Microelectronics; Nonvolatile memory; Prototypes; Threshold voltage; Writing;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422281
