DocumentCode
2657181
Title
A Monolithic GaAs I.F. Amplifier for Integrated Receiver Applications
Author
Decker, D.R. ; Gupta, A.K. ; Petersen, W. ; Ch´en, D.R.
fYear
1980
fDate
28-30 May 1980
Firstpage
363
Lastpage
366
Abstract
A monolithic GaAs integrated amplifier has been constructed for the 500 to 1000 MHz intermediate frequency band. The amplifier provides 8.0 /spl plusmn/ 1.5 dB gain across the band. The output of the amplifier utilizes a source follower configuration to obtain a favorably low output VSWR of less than 1.5:1 (return loss >15 dB). All bias lines with integral bypass capacitors are contained on the chip and this amplifier is suitable for further integration as a building block of a monolithically integrated receiver front end.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/MWSYM.1980.1124288
Filename
1124288
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