A Reconfigurable Dual-Mode CMOS Power Amplifier With Integrated T/R Switch for 0.1–1.5-GHz Multistandard Applications

Author

Yun Yin ; Baoyong Chi ; Zhaokang Xia ; Zhihua Wang

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

61

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

471

Lastpage

475

Abstract

A reconfigurable dual-mode power amplifier (PA) with an integrated transmit/receive (T/R) switch in 65-nm CMOS is presented. The PA can be reconfigured into linear mode or switching mode. In the linear mode, it achieves >19 dBm OP1 dB with >20% PAE over 0.1-1.5 GHz; in the switching mode, the maximum saturation output power of 23.2 dBm with the peak PAE of 60% is obtained. By utilizing the asymmetrical topology and stacked techniques, the T/R switch demonstrates ~0.5-dB TX insertion loss, >27-dB TX-RX isolation, and 24.8 dBm IP1 dB across 0.1-1.5 GHz. This brief proposes, for the first time, a CMOS dual-mode PA with an integrated T/R switch for multistandard applications.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; switches; PA; asymmetrical topology; frequency 0.1 GHz to 1.5 GHz; integrated T-R switch; integrated transmit-receive switch; linear mode; multistandard applications; reconfigurable dual-mode CMOS power amplifier; size 65 nm; stacked techniques; switching mode; CMOS integrated circuits; Harmonic analysis; Power amplifiers; Power harmonic filters; Switches; Switching circuits; Transistors; CMOS; dual-mode; multistandard; power amplifier (PA); radio frequency (RF); reconfigurable; transmit/receive (T/R) switch;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2014.2327343

Filename

6823171