Title :
A 12 Ghz 140k Low Noise GaAs FET Amplifier
Author :
Fujiki, Y. ; Fukuda, S. ; Haga, I. ; Ohata, K.
Abstract :
A low noise GaAs FET amplifier provided with the noise temperature of less than 140K (NF: 1.71 dB) at -50/spl degree/C over 1 I .7 - 12.2 GHz band was developed using GaAs FET´s with a recess structure and MIC technology.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124290
