Ultra Low Chirp GaAs Dual Gate FET Microwave Oscillators

Pulsed RF oscillators using dual gate gallium arsenide FETs have been realised in X and J band frequencies. These oscillators have excellent chirp characteristics. The dual gate MESFET properties which provides such chirp performance are discussed together with experimental results. Further work which needs to be undertaken to improve the performance of these oscillators for practical applications is outlined.