• DocumentCode
    2657307
  • Title

    An Osciplier Up to K-Band Using Dual-Gate GaAs MESFET

  • Author

    Chu, A.S. ; Chen, P.T.

  • fYear
    1980
  • fDate
    28-30 May 1980
  • Firstpage
    383
  • Lastpage
    386
  • Abstract
    The feasibility of using a dual-gate GaAs MESFET with Mo-Au gates as a Ku or K-band osciplier has been demonstrated. Two test oscipliers were measured, one osciplier in Ku-band delivered 16.3 dBm at 12 GHz, while the other in K-band offered 9.0 dBm output power at 18.2 GHz and 3.8 dBm at 22 GHz.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave symposium Digest, 1980 IEEE MTT-S International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1980.1124294
  • Filename
    1124294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657307