Title :
Experimental extraction of point defects parameters needed for 2-D process modeling using reverse modeling
Author :
Shauly, Eitan N. ; Ghez, Richard ; Komem, Yigal
Author_Institution :
Tower Semicond. Ltd., Migdal Ha´´Emek, Israel
Abstract :
This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The reverse modeling method was used to determine the diffusion coefficient (DI), surface recombination rate of defects (KI) and the characteristics of the injecting source. Analysis showed similarity between DI in the 2D system compared with the value obtained from non-patterned samples. The results for DI and KI are very well described by the Arrhenius expressions. DI was found to be related to the substrate type e.g. EPI or CZ. The values of KI related to the interface type, oxidizing or nonoxidizing (SiO2 or Si3N4).
Keywords :
CMOS integrated circuits; doping profiles; impurity distribution; integrated circuit measurement; integrated circuit modelling; interface structure; point defects; semiconductor device models; 2D impurity diffusion; 2D process modeling; Arrhenius expressions; CMOS silicon devices; CZ substrate type; EPI substrate type; Si3N4; Si3N4 interface; SiO2; SiO2 interface; defect surface recombination rate; diffusion coefficient; injecting source characteristics; nonoxidizing interface type; oxidizing interface type; point defects parameters; reverse modeling; simulation; Atomic layer deposition; Atomic measurements; CMOS process; Computational modeling; Electric variables measurement; Oxidation; Predictive models; Radiative recombination; Semiconductor device modeling; Silicon devices;
Conference_Titel :
Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on
Print_ISBN :
0-7803-8715-5
DOI :
10.1109/ICECS.2004.1399693
