DocumentCode
2657326
Title
Transistor with moving gate to control electron flow
Author
Churi, A. ; Kurlawala, P. ; Magaldi, L. ; Shtein, S. Mil
Author_Institution
Univ. of Massachusetts-Lowell, Lowell
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
We report in this study the different gate configuration in n-channel depletion mode Metal Semiconductor Field Effect Transistor (MESFET) designed for better control of the flow of electrons. In conventional operation mode of MESFET the electric field in the channel of the transistor near the drain is higher due to large positive voltage at the drain.
Keywords
Schottky gate field effect transistors; semiconductor device models; MESFET; electron flow control; gate configuration; metal semiconductor field effect transistor; moving gate; n channel depletion mode; Educational institutions; Electrons; Electrostatic actuators; Equations; MESFETs; Piezoelectric actuators; Resonance; Transconductance; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422290
Filename
4422290
Link To Document