Title :
Transistor with moving gate to control electron flow
Author :
Churi, A. ; Kurlawala, P. ; Magaldi, L. ; Shtein, S. Mil
Author_Institution :
Univ. of Massachusetts-Lowell, Lowell
Abstract :
We report in this study the different gate configuration in n-channel depletion mode Metal Semiconductor Field Effect Transistor (MESFET) designed for better control of the flow of electrons. In conventional operation mode of MESFET the electric field in the channel of the transistor near the drain is higher due to large positive voltage at the drain.
Keywords :
Schottky gate field effect transistors; semiconductor device models; MESFET; electron flow control; gate configuration; metal semiconductor field effect transistor; moving gate; n channel depletion mode; Educational institutions; Electrons; Electrostatic actuators; Equations; MESFETs; Piezoelectric actuators; Resonance; Transconductance; Transistors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422290
