Analysis and simulation of spiral inductor fabricated on silicon substrate

In this paper, parameter extraction methodology of the inductor (L) fabricated on silicon is presented. Firstly, formula for parameter extraction of the target equivalent circuit is proposed. Because of its simplicity and physically-based background, all the model parameters can be extracted without any optimization procedure. By the verification of S-parameter and RF-noise with the equivalent circuit solved by the proposed formula, its modeling capability has been proven up to 20 GHz. Further investigation on model parameters´ geometrical dependency was made, and clear layout dependencies have been shown based on the proposed methodology.