• DocumentCode
    2657345
  • Title

    Rapid melt growth of Ge tunnel junctions for interband tunnel transistors

  • Author

    Zhang, Qin ; Sutar, Surajit ; Kosel, Thomas ; Seabaugh, Alan

  • Author_Institution
    Univ. of Notre Dame, Notre Dame
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, the authors report on the simulated characteristics of Ge interband tunnel transistors and show the first characteristics of submicron p+n+ junction tunnel junctions using rapid melt growth of Ge. This process uses a phosphorus spin-on diffusant followed by rapid thermal annealing to form the n layer. Aluminum is then deposited by lift-off, capped with Si3N4, and liquified in a rapid thermal processor to dissolve back and regrow the p+ side of the tunnel junction.
  • Keywords
    germanium; tunnel transistors; Ge; interband tunnel transistors; melt growth; submicron junction; tunnel junctions; Current density; Educational institutions; Effective mass; Electron beams; FETs; MOSFET circuits; Photonic band gap; Power dissipation; Rapid thermal processing; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422291
  • Filename
    4422291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657345