Rapid melt growth of Ge tunnel junctions for interband tunnel transistors

In this paper, the authors report on the simulated characteristics of Ge interband tunnel transistors and show the first characteristics of submicron p⁺n⁺ junction tunnel junctions using rapid melt growth of Ge. This process uses a phosphorus spin-on diffusant followed by rapid thermal annealing to form the n layer. Aluminum is then deposited by lift-off, capped with Si₃N₄, and liquified in a rapid thermal processor to dissolve back and regrow the p⁺ side of the tunnel junction.